The Optoelectronic Materials Spectroscopy group at Manchester Physics

Our group carries out research within the Photon Physics sub-group of the Department of Physics and Astronomy, based in the Photon Science Institute at the University of Manchester.

We study the role of inhomogeneity in novel optoelectronic materials; how variations in materials at the nanoscale determine device performance. Our current research is spans three primary themes:

  • High-throughput semiconductor nano-optoelectronics methodology
  • Novel optoelectronic materials for photonic device applications
  • Ultrafast and single photon optical techniques

We welcome interest from anyone who wants to join the group.

Conference Talks: EUROMAT 2021

Group PhD student Ruqaiya Al-Abri and postdoctoral researcher Stephen Church both gave oral talks at EUROMAT 2021. The conference, originally scheduled to be held in-person in Vienna, ran as a virtual meeting.

Ruqaiya gave her first oral presentation on her collaboration with Lund University on “High-throughput spectroscopy for optimizing internal quantum efficiency in Aerotaxy-grown Zn-Doped GaAs Nanowires” in the Nanowires and Nanotubes session.

Stephen presented his new work, (and first in the group) on a recent collaboration with the Weizmann Institute on “Carrier dynamics and recombination mechanisms from high-throughput study of strained CsPbBr3 perovskite nanowires“.

New Paper: Defect-Free Axially Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement

Transmission electron microscopy and room-temperature photoluminescence of a dot-in-wire structure.

In a new collaboration between Yunyan Zhang and Profs. Huiyun Liu (UCL), Ana Sanchez (Warwick) and David Mowbray (Sheffield) we report the fabrication and measurement of a GaAs/GaAsP quantum dot-in-wire structure in Nano Letters.

While many material architechtures have been explored for single photon emission, the GaAsP-GaAs system provides strong carrier confinement and sharp interfaces, and can be grown directly onto a silicon substrate. This is a new route to silicon integrated single photon devices.

Reference: Defect-Free Axially Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement, Yunyan Zhang, Anton V. Velichko, H. Aruni Fonseka, Patrick Parkinson, James A. Gott, George Davis, Martin Aagesen, Ana M. Sanchez, David Mowbray, and Huiyun Liu, Nano Lett. (2021), DOI: 10.1021/acs.nanolett.1c01461

New Publication: Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates

A new collaborative paper led by Giorgos Boros and the team of Xuezhe Yu and Huiyun Liu at University College London has been published in J Phys Chem C. In this work, Giorgos reported the development of high quality ternary nanowires (AlGaAs) grown via MBE. While the AlGaAs/GaAs heterostructure system is well known in planar films, it has proven challenging to explore in the nanowire architecture.

Reference: Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates, Giorgos Boros et al., J Phys Chem C. 2021, DOI: 10.1021/acs.jpcc.1c03680

New Conference Proceeding: Effect of Micron-scale Photoluminescence Variation on Droop Measurements in InGaN/GaN Quantum Wells

Rachel Barrett (a PhD student in the Binks group in Manchester) has had a conference proceeding published in collaboration with the OMS group. The study, on micro-scale spectroscopy of GaN-based quantum wells was presented at Photon 2020 and was carried out in collaboration with the Department of Materials Science at Cambridge.

Reference: Effect of Micron-scale Photoluminescence Variation on Droop Measurements in InGaN/GaN Quantum Wells, Barrett et al., J Phys Conference Series, 1919, 012011 (2021), DOI:10.1088/1742-6596/1919/1/012011