New Paper : Facet-Related Non-uniform Photoluminescence in Passivated GaAs Nanowires

(Left) SEM image of a single 250nm diameter GaAs nanowire with {112} facets highlighted and (Right) recombination measured in the {110} region (blue) and {112} region (red), showing emission quenching at these surfaces.

Our collaborative work on spatially inhomogeneous recombination in semiconductor nanowires has been published in a special issue of Frontiers in Chemistry. The work, led by Dr. Nian (Jenny) Jiang at the University of Cambridge reports the spatially varying emission intensity from passivated nanowires. By comparing the bulk emission to buried quantum well emission, we show that the a reduction in emission is related to {112}-faceted surfaces at the base of the wires.

This work solves a long-standing question in optoelectronic nanowires – why does the emission vary for nominally uniform structures? It provides two routes to avoiding this variation, through quantum well emission and by tuning the surface reconstruction to favour {110} side-walls.

Reference: Facet-Related Non-uniform Photoluminescence in Passivated GaAs Nanowires, Nian Jiang, Hannah Joyce, Patrick Parkinson, Jennifer Wong-Leung , Hark Hoe Tan and Chennupati Jagadish, Frontiers in Chemistry, 8, 1136 (2020), DOI: 10.3389/fchem.2020.607481

New Publication – The influence of surfaces on the transient terahertz conductivity and electron mobility of GaAs nanowires


In research led by Hannah Joyce (University of Cambridge), and colleagues at the University of Oxford and the Australian National University we have reported an in-depth terahertz study of the influence of surfaces on carrier recombination in nanowires.

By performing power-dependant and diameter-dependant measurements, Hannah determined the surface recombination velocity in GaAs nanowires. Given the huge surface-area-to-volume ratio in nanowires, this is a key property and one which is essential to understanding the electronic performance in this nanomaterial.