New Paper: Defect-Free Axially Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement

Transmission electron microscopy and room-temperature photoluminescence of a dot-in-wire structure.

In a new collaboration between Yunyan Zhang and Profs. Huiyun Liu (UCL), Ana Sanchez (Warwick) and David Mowbray (Sheffield) we report the fabrication and measurement of a GaAs/GaAsP quantum dot-in-wire structure in Nano Letters.

While many material architechtures have been explored for single photon emission, the GaAsP-GaAs system provides strong carrier confinement and sharp interfaces, and can be grown directly onto a silicon substrate. This is a new route to silicon integrated single photon devices.

Reference: Defect-Free Axially Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement, Yunyan Zhang, Anton V. Velichko, H. Aruni Fonseka, Patrick Parkinson, James A. Gott, George Davis, Martin Aagesen, Ana M. Sanchez, David Mowbray, and Huiyun Liu, Nano Lett. (2021), DOI: 10.1021/acs.nanolett.1c01461

New Publication: Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates

A new collaborative paper led by Giorgos Boros and the team of Xuezhe Yu and Huiyun Liu at University College London has been published in J Phys Chem C. In this work, Giorgos reported the development of high quality ternary nanowires (AlGaAs) grown via MBE. While the AlGaAs/GaAs heterostructure system is well known in planar films, it has proven challenging to explore in the nanowire architecture.

Reference: Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates, Giorgos Boros et al., J Phys Chem C. 2021, DOI: 10.1021/acs.jpcc.1c03680