Topic

UCL

A collection of 8 issues

New arXiv paper: Data-driven Discovery for Robust Optimization of Semiconductor Nanowire Lasers

Group postdoc Stephen Church has uploaded our new study to arXiv. This work is a collaboration between world-leading growth and characterization groups: * Friedrich Schiller University Jena * The Australian National University * Zhejiang University * University of Cambridge * University College London Our comprehensive analysis reveals that while optimizing internal quantum efficiency is crucial

Conference Presentation: UK Semiconductors

Group postdoc Stephen Church presented a talk entitled “Disentangling Gain, Distributed Losses and End-Facet Losses in Freestanding Nanowire Lasers using Automated High-Throughput Micro-Spectroscopy” at UK Semiconductors in Sheffield, UK. This collaborative work between Manchester and colleagues in Zhejiang and University College London reported a multimodal correlative approach to studying nanolasers.

PhD examiner for Zizhuo Liu

Patrick was external examiner for Zizhuo Liu, a PhD candidate in Prof. Huiyun Liu‘s group at University College London. Zizhuo defended his thesis entitled “High-performance III-V Quantum structures and devices grown on Si substrates”.

New Publication: Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates

A new collaborative paper led by Giorgos Boros and the team of Xuezhe Yu and Huiyun Liu at University College London has been published in J Phys Chem C. In this work, Giorgos reported the development of high quality ternary nanowires (AlGaAs) grown via MBE. While the AlGaAs/GaAs heterostructure

New Paper: Heterostructure and Q-factor engineering for low-threshold and persistent nanowire lasing

Group PhD student Stefan Skalsky’s paper on semiconductor nanowire lasing has just been published in Light: Science and Applications. In this new work, Stefan used his newly developed Interferometric Time-Correlated Single Photon Counting system (i-TCSPC) to measure the coherence length of laser emission from nanowires grown by the Liu

New arXiv paper: Defect-Free Axial GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement

We have uploaded a new paper on quantum-dot-in-nanowire structures to the arXiv. Working with colleagues at University College London, the University of Warwick, the University of Sheffield and the University of Copenhagen, this work demonstrates the growth of high-quality GaAs quantum dot inclusions in a GaAsP nanowire, with evidence for

Talk at UK Semiconductors 2019

Group PhD student Stefan Skalsky gave a talk at the UK Semiconductors meeting in Sheffield. His talk, on “Nanosecond lasing and mm-scale optical coherence length in GaAsP/GaAs Quantum-Well Nanowire Lasers” descibed his recent work using interferometric time-resolved spectroscopy to reveal the end-facet reflectivity in nanowire lasers.

New Paper - Highly-Strained III-V-V Co-Axial Nanowire Quantum Wells with Strong Carrier Confinement

A new paper has been accepted for publication in ACS Nano. This work, led by Dr. Yunyan Zhang and Prof. Huiyun Liu at University College London, describes the growth and characterisation of quantum-well tube nanowires based on GaAs-GaAsP heterostructures. This work brings together partners from UCL, Sheffield, Warwick, Lund (Sweden)