Topic

Huiyun Liu

A collection of 8 issues

New Publication: Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Axial Heterostructures Grown by Molecular Beam Epitaxy

A new paper in collaboration with the Huiyun Liu group (UCL), Ana Sanchez group (Warwick) and David Mowbray group (Sheffield). In our contribution, led by Stephen Church, we showed that a previously low quality structure (AlGaAs) can be made to emit strongly at room temperature. Reference: Self-Catalyzed AlGaAs Nanowires and

New Publication: Improving Quantum Well Tube Homogeneity Using Strained Nanowire Heterostructures

Group PhD student Nikesh Patel has just had his first paper accepted in ACS Applied Materials and Interfaces. His study uses a new methodology to understand how quantum "shells" - less than 10nm thick - vary both within single nanowires, and between them. By using automated high-throughput approaches on over

New Publication: Holistic Nanowire Laser Characterization as a Route to Optimal Design

Group postdoc Stephen Church has just had a paper accepted into Advanced Optical Materials. In this work, he reports the study of thousands of individual nanowire lasers, using advanced statistical methods to identify a route to optimization. Photonic integrated circuitry is rapidly emerging as an alternative to electronics for specialist

Conference Presentation: UK Semiconductors

Group postdoc Stephen Church presented a talk entitled “Disentangling Gain, Distributed Losses and End-Facet Losses in Freestanding Nanowire Lasers using Automated High-Throughput Micro-Spectroscopy” at UK Semiconductors in Sheffield, UK. This collaborative work between Manchester and colleagues in Zhejiang and University College London reported a multimodal correlative approach to studying nanolasers.

New Paper: Defect-Free Axially Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement

In a new collaboration between Yunyan Zhang and Profs. Huiyun Liu (UCL), Ana Sanchez (Warwick) and David Mowbray (Sheffield) we report the fabrication and measurement of a GaAs/GaAsP quantum dot-in-wire structure in Nano Letters. While many material architechtures have been explored for single photon emission, the GaAsP-GaAs system provides

New Publication: Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates

A new collaborative paper led by Giorgos Boros and the team of Xuezhe Yu and Huiyun Liu at University College London has been published in J Phys Chem C. In this work, Giorgos reported the development of high quality ternary nanowires (AlGaAs) grown via MBE. While the AlGaAs/GaAs heterostructure

New Paper: Heterostructure and Q-factor engineering for low-threshold and persistent nanowire lasing

Group PhD student Stefan Skalsky’s paper on semiconductor nanowire lasing has just been published in Light: Science and Applications. In this new work, Stefan used his newly developed Interferometric Time-Correlated Single Photon Counting system (i-TCSPC) to measure the coherence length of laser emission from nanowires grown by the Liu

New arXiv paper: Defect-Free Axial GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement

We have uploaded a new paper on quantum-dot-in-nanowire structures to the arXiv. Working with colleagues at University College London, the University of Warwick, the University of Sheffield and the University of Copenhagen, this work demonstrates the growth of high-quality GaAs quantum dot inclusions in a GaAsP nanowire, with evidence for