Topic

David Mowbray

A collection of 3 issues

New Publication: Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Axial Heterostructures Grown by Molecular Beam Epitaxy

A new paper in collaboration with the Huiyun Liu group (UCL), Ana Sanchez group (Warwick) and David Mowbray group (Sheffield). In our contribution, led by Stephen Church, we showed that a previously low quality structure (AlGaAs) can be made to emit strongly at room temperature. Reference: Self-Catalyzed AlGaAs Nanowires and

New Paper: Defect-Free Axially Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement

In a new collaboration between Yunyan Zhang and Profs. Huiyun Liu (UCL), Ana Sanchez (Warwick) and David Mowbray (Sheffield) we report the fabrication and measurement of a GaAs/GaAsP quantum dot-in-wire structure in Nano Letters. While many material architechtures have been explored for single photon emission, the GaAsP-GaAs system provides

New Publication: Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates

A new collaborative paper led by Giorgos Boros and the team of Xuezhe Yu and Huiyun Liu at University College London has been published in J Phys Chem C. In this work, Giorgos reported the development of high quality ternary nanowires (AlGaAs) grown via MBE. While the AlGaAs/GaAs heterostructure