New arXiv paper: Defect-Free Axial GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement

We have uploaded a new paper on quantum-dot-in-nanowire structures to the arXiv. Working with colleagues at University College London, the University of Warwick, the University of Sheffield and the University of Copenhagen, this work demonstrates the growth of high-quality GaAs quantum dot inclusions in a GaAsP nanowire, with evidence for single photon emission at low temperatures and emission to room temperature.

Reference: Defect-Free Axial GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement, Zhang et al., arXiv:2002.07071

New Arxiv Paper – Visible and infrared photocurrent enhancement in a graphene-silicon Schottky photodetector through surface-states and electric field engineering

Nawapong Unsuree has submitted a new paper to the Arxiv reporting on work coming from a recent collaboration between the Echtermeyer group (Manchester) and the Parkinson group. The research was conducted in the National Graphene Institute and the Photon Science Institute.

Following on from recent work developing graphene-silicon Schottky photodiodes, this new research reports the application of infrared scanning photocurrent microscopy to new devices with structured electric field, to reveal a ten-fold enhancement in photocurrent responsivity close to lateral edges.

This research paves the way towards high-sensitivity infrared photodetectors based on the graphene-silicon architecture.

Reference: “Visible and infrared photocurrent enhancement in a graphene-silicon Schottky photodetector through surface-states and electric field engineering“, Unsuree et al. arXiv:1901.10998, 2019