New arXiv paper: Defect-Free Axial GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement

We have uploaded a new paper on quantum-dot-in-nanowire structures to the arXiv. Working with colleagues at University College London, the University of Warwick, the University of Sheffield and the University of Copenhagen, this work demonstrates the growth of high-quality GaAs quantum dot inclusions in a GaAsP nanowire, with evidence for single photon emission at low temperatures and emission to room temperature.

Reference: Defect-Free Axial GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement, Zhang et al., arXiv:2002.07071

New Paper: Characterisation, Selection and Micro-Assembly of Nanowire Laser Systems

Our collaborative work on the selection, transfer and testing of semiconductor nanowire lasers has now been published in Nano Letters.

In this work, growth colleagues at ANU prepared nanowire lasers which were characterised at Manchester. This characterisation was used to select bins of nanowires, which were transferred using a cutting edge pick-and-place tool at the University of Strathclyde. The transferred wires were re-tested in Manchester; while some wires showed identical behaviour, some showed a change in lasing mode.

This work will guide the heterointegration of nanowire lasers with photonic circuits, targetting high-yield and industrial applicability.

Reference: Characterisation, Selection and Micro-Assembly of Nanowire Laser Systems, Jevtics et al., Nano Letters (ASAP), DOI: 10.1021/acs.nanolett.9b05078