New Paper – Visible and infrared photocurrent enhancement in a graphene-silicon Schottky photodetector through surface-states and electric field engineering

Spatially mapped photocurrent response from an engineered graphene/Silicon Schottky photodiode at telecommunication wavelengths showing enhancement at trench edges.

Nawapong Unsuree has had a paper accepted for publication in 2D Materials. coming from a collaboration between the Echtermeyer group (Manchester) and the Parkinson group. The research was conducted in the National Graphene Institute and the Photon Science Institute.

This new research reports the application of infrared scanning photocurrent microscopy to new devices with structured electric field, to reveal a ten-fold enhancement in photocurrent responsivity close to lateral edges.

This research paves the way towards high-sensitivity infrared photodetectors based on the graphene-silicon architecture.

Reference: Visible and infrared photocurrent enhancement in a graphene-silicon Schottky photodetector through surface-states and electric field engineering, 2D Materials, 2019, DOI: 10.1088/2053-1583/ab32f5

Talk at UK Semiconductors 2019

Group PhD student Stefan Skalsky gave a talk at the UK Semiconductors meeting in Sheffield. His talk, on “Nanosecond lasing and mm-scale optical coherence length in GaAsP/GaAs Quantum-Well Nanowire Lasers” descibed his recent work using interferometric time-resolved spectroscopy to reveal the end-facet reflectivity in nanowire lasers.