New Paper – Highly-Strained III-V-V Co-Axial Nanowire Quantum Wells with Strong Carrier Confinement

A new paper has been accepted for publication in ACS Nano. This work, led by Dr. Yunyan Zhang and Prof. Huiyun Liu at University College London, describes the growth and characterisation of quantum-well tube nanowires based on GaAs-GaAsP heterostructures.

Low temperature lasing from GaAs/GaAsP quantum well tube nanowire lasers.

This work brings together partners from UCL, Sheffield, Warwick, Lund (Sweden), Imperial College London, the Danish Defence Research Centre and Manchester to design new materials for III-V nanowire lasers. Unlike previous quantum-well lasers based on GaAs or InP cores, here both the barrier and core material are of higher energy than the emission wavelength, dramatically reducing the cavity losses. Furthermore, the strained quatum wells are highly effective at confining carriers, which provide a new platform for the ultimate goal of room-temperature, continuously-operating nanowire lasers for on-chip applications.

Reference: Highly-Strained III-V-V Co-Axial Nanowire Quantum Wells with Strong Carrier Confinement, Zhang et al. ACS Nano (2019) doi: 10.1021/acsnano.9b01775