New Paper – Optical Study of p-Doping in GaAs Nanowires for Low-Threshold and High-Yield Lasing

Our new work on large-scale statistical spectroscopy to optimize nanowire lasers is published today in Nano Letters. In this work, PhD student Arturo studied thousands of nanowires to identify the lowest threshold nanowire, as well as to model emission to identify the primary sources of non-radiative emission.

By quickly sorting nanowires by doping and length, he was able to demostrate sub-sets with over 90% yield and class-leading thresholds, pointing the way towards electrically injected nanolasers.

Congratulations Arturo!

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(Left) Far-field emission from a record breaking nanowire laser, emitting at room temperature and low exciation levels. (Right) Doping vs Quantum efficiency, showing two key limiting behaviours.

Reference: “Optical Study of p-Doping in GaAs Nanowires for Low-Threshold and High-Yield Lasing”, Juan Alanis et al., Nano Letters, ASAP 2018, DOI: 10.1021/acs.nanolett.8b04048